Influence of depth position of end-of-range defects on current-voltage and noise characteristics of shallow (p+/n) junctions

The goal of this work is to study the relationship that exists between a population of end of range (EOR) defects, measured by TEM, and electrical properties of the Ge preamorphized ( p + /n) junctions. In this paper, we report current-voltage ( I - V ) and low frequency (L-F) noise measurements, performed on crystalline and Ge preamorphized diodes, as a function of temperature. The I - V measurements reveal the conduction process which is dominant in the shallow ( p + /n) junctions, while L-F noise characteristics confirm the presence of generation-recombination centers in direct relation to the presence of EOR defects in the n region. Moreover, temperature-L-F noise measurements have shown a drawback of this shallow ( p + /n) junction formation procedure, independent of the preamorphization step. Nevertheless, high-quality ( p + /n) junctions can be obtained by low-energy boron implantation into germanium preamorphized Si substrates using rapid thermal annealing for dopant activation through the judicious choice of Ge implantation energy.