New synthesis method of TiC film by applying high pressure and electric field
A new synthesis method for TiC films is developed by applying high pressure (1.45 or 10.9 kbar) and electric field (37 or 99 MV/m) to a double layer consisting of a polyethylene film and a Ti film on a steel substrate at room temperature. Not only TiC + ions but also (TiC 2 ) 2 + , TiC 2 H + and (Ti...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1997-03, Vol.36 (3A), p.1223-1227 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new synthesis method for TiC films is developed by applying high pressure (1.45 or 10.9 kbar) and electric field (37 or 99 MV/m) to a double layer consisting of a polyethylene film and a Ti film on a steel substrate at room temperature. Not only TiC
+
ions but also (TiC
2
)
2
+
, TiC
2
H
+
and (TiC
2
)
2
H
+
ions are detected, using secondary ion mass spectroscopy, on the surfaces of the synthesized samples. An X-ray diffraction peak of TiC(111) is clearly visible in the sample heat treated at 600°C for 2 days after synthesising under the conditions of 10.9 kbar and 37 MV/m with a negative electrode on the Ti-film side. The Knoop hardness of this sample shows a higher value than those synthesized using other conditions. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.36.1223 |