New synthesis method of TiC film by applying high pressure and electric field

A new synthesis method for TiC films is developed by applying high pressure (1.45 or 10.9 kbar) and electric field (37 or 99 MV/m) to a double layer consisting of a polyethylene film and a Ti film on a steel substrate at room temperature. Not only TiC + ions but also (TiC 2 ) 2 + , TiC 2 H + and (Ti...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-03, Vol.36 (3A), p.1223-1227
Hauptverfasser: SUZUKI, K, NIHEI, T, IKEDA, S, MATSUURA, M, MATSUMOTO, K
Format: Artikel
Sprache:eng
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Zusammenfassung:A new synthesis method for TiC films is developed by applying high pressure (1.45 or 10.9 kbar) and electric field (37 or 99 MV/m) to a double layer consisting of a polyethylene film and a Ti film on a steel substrate at room temperature. Not only TiC + ions but also (TiC 2 ) 2 + , TiC 2 H + and (TiC 2 ) 2 H + ions are detected, using secondary ion mass spectroscopy, on the surfaces of the synthesized samples. An X-ray diffraction peak of TiC(111) is clearly visible in the sample heat treated at 600°C for 2 days after synthesising under the conditions of 10.9 kbar and 37 MV/m with a negative electrode on the Ti-film side. The Knoop hardness of this sample shows a higher value than those synthesized using other conditions.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.1223