Atmosphere dependence in phosphorus pileup at the silicon surface during isochronal heating

The heating atmosphere dependence of the amount of implanted phosphorus that piles up at the silicon surface during a 3-min heating at 800–1000 °C is investigated. The amount is found to be larger in oxygen than in nitrogen at 900 °C. It is concluded this is due to a larger amount of phosphorus comi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1997, Vol.36 (3A), p.1047-1048
Hauptverfasser:	SATO, Y, ITSUMI, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Exact sciences and technology Physics Structure of solids and liquids crystallography
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Zusammenfassung:	The heating atmosphere dependence of the amount of implanted phosphorus that piles up at the silicon surface during a 3-min heating at 800–1000 °C is investigated. The amount is found to be larger in oxygen than in nitrogen at 900 °C. It is concluded this is due to a larger amount of phosphorus coming to the surface from inside the silicon in oxygen as a result of oxidation enhanced diffusion and transient enhanced diffusion. Phosphorus depth profiles support this conclusion.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.36.1047