Growth of nitrogen-doped ZnSe by photoassisted metalorganic chemical vapor deposition

Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390° C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated. t-Butylamine was used as a nitrogen dopant source. A nitrog...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996-07, Vol.35 (7B), p.L923-L925
Hauptverfasser:	FUJITA, Y, TERADA, T, FUJII, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Cross-disciplinary physics: materials science rheology Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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Zusammenfassung:	Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390° C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated. t-Butylamine was used as a nitrogen dopant source. A nitrogen concentration of more than 10 18 cm -3 was obtained. The samples showed p-type conduction, and a maximum hole concentration of 3.0×10 18 cm -3 was achieved by MOCVD.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.35.l923