Photoluminescence spectra of nitrogen-doped ZnSe by photoassisted metal-organic chemical vapor deposition

Photoluminescence spectra of nitrogen-doped ZnSe grown by photoassisted metal-organic chemical vapor deposition (MOCVD) at temperatures of 330 and 350° C and with nitrogen concentration ranging from 2.0×10 17 cm -3 to 3.0×10 18 cm -3 were measured. The spectra of lightly doped samples showed a donor-to-acceptor (D-A) pair emission line at 2.696 eV with LO phonon replicas. The spectra for heavily doped samples were dominated by a broad-band D-A pair emission at longer wavelengths. The comparison of photoluminescence spectra of nitrogen-doped ZnSe grown by MOCVD and molecular beam epitaxy (MBE) is discussed.