Unstable region of solid composition in ternary nitride alloys grown by metalorganic vapor-phase epitaxy

A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAlN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist i...

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Veröffentlicht in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12B), p.L1638-L1640
Hauptverfasser: KOUKITU, A, SEKI, H
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container_title Japanese Journal of Applied Physics
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creator KOUKITU, A
SEKI, H
description A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAlN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist in InGaN and InAlN alloys. The origin of the unstable region is also discussed.
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1347-4065
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: structure, mechanical and thermal properties
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Physics
Solid-solid transitions
Specific phase transitions
title Unstable region of solid composition in ternary nitride alloys grown by metalorganic vapor-phase epitaxy
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