Unstable region of solid composition in ternary nitride alloys grown by metalorganic vapor-phase epitaxy
A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAlN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist i...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1996-12, Vol.35 (12B), p.L1638-L1640 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAlN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist in InGaN and InAlN alloys. The origin of the unstable region is also discussed. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.35.L1638 |