GaAs-based vertical-cavity surface-emitting laser on Si substrate by metalorganic chemical vapor deposition

We have fabricated an AlGaAs/GaAs surface emitting laser on a Si substrate by metalorganic chemical vapor deposition. A distributed Bragg reflector consisting of 23 periods of AlAs/Al 0.1 Ga 0.9 As semiconductor multilayers and a Au metal thin-film reflector are used as reflection mirrors of the Si substrate side and of the top side, respectively. The laser has a cavity which is three times as long as the lasing wavelength and has an Al 0.3 Ga 0.7 As/GaAs multi (10) quantum well structure. This laser exhibits a cw threshold current of 73 mA (3.7 kA/cm 2 ) at 100 K. In addition, the lasing wavelength is 844 nm with a full width at half-maximum of 2.2 nm. To our knowledge, this surface emitting laser on Si is the first to be operated under cw conditions.