Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

We investigated the optimum molecular beam epitaxy (MBE) growth conditions for fabrication of a high-reflectivity distributed Bragg reflector (DBR) on (411)A GaAs substrates with extremely flat heterointerfaces. A high-reflectivity DBR mirror consisting of AlAs/GaAs was successfully fabricated under the investigated optimum conditions of growth temperature of 580°C with V/III ( As 4 /Ga) ratio of ∼8. Using this high-reflectivity DBR mirror, we succeeded for the first time in the optically pumped pulse operation of InGaAs vertical-cavity surface-emitting lasers (VCSELs) at room temperature on (411)A GaAs substrates with a threshold excitation power density of 11 MW/cm 2 .