Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) and theoretical calculation. A single peak emisson, at a wavelength of 417.5 nm, with a full width at half-maximum of 0.15 nm, was obtained. The threshold current density of the laser was 50 kA/cm 2 and a voltage for the threshold current was 20 V.