Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm 2 , and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, a...

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Veröffentlicht in:Japanese Journal of Applied Physics 1996-11, Vol.35 (11), p.5711-5713
Hauptverfasser: KONDOW, M, NAKATSUKA, S, KITATANI, T, YAZAWA, Y, OKAI, M
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Zusammenfassung:We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm 2 , and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.5711