Position-dependent instability of lithium-drifted silicon detector

Position-dependent instability of lithium-drifted silicon detector

The variation in detector sensitivity was studied using 1150 nm light and scanning-electron microscope images. The charge-collection efficiency induced by photons is clearly position-dependent at low voltage. We propose that such variation is caused by vacancies.

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Veröffentlicht in:Japanese Journal of Applied Physics 1996, Vol.35 (5A), p.2814-2815
Hauptverfasser: MIYACHI, T, OHKAWA, S, MATSUZAWA, H, OTOGAWA, T, KOBAYASHI, N, ONABE, H
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Experimental methods and instrumentation for elementary-particle and nuclear physics
Nuclear physics
Physics
Radiation detectors, dosimeters
Solid-state detectors
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Beschreibung
Zusammenfassung:The variation in detector sensitivity was studied using 1150 nm light and scanning-electron microscope images. The charge-collection efficiency induced by photons is clearly position-dependent at low voltage. We propose that such variation is caused by vacancies.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.2814