Impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP by dielectric thin cap films and characterization of its in-plane spatial resolution

We have studied impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP, induced by three different dielectric cap films, namely, SiO 2 , SiN x and SrF 2 . The difference in photoluminescence characteristics of these materials after heat treatment has been discussed. Furthermore, the in-pl...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996, Vol.35 (2B), p.1276-1279
Hauptverfasser:	SUDO, S, ONISHI, H, NAKANO, Y, SHIMOGAKI, Y, TADA, K, MONDRY, M. J, COLDREN, L. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	We have studied impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP, induced by three different dielectric cap films, namely, SiO 2 , SiN x and SrF 2 . The difference in photoluminescence characteristics of these materials after heat treatment has been discussed. Furthermore, the in-plane spatial resolution of the disordering process has been investigated for the first time.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.35.1276