Direct observation of electron jet from a point contact

We report on the photoluminescence image around a point contact fabricated in an InGaAs/GaAs quantum well using a micro-photoluminescence measurement technique. The photoluminescence image was strongly influenced by majority electron flow from the point contact, where the majority electron flow grea...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996, Vol.35 (2B), p.1151-1153
Hauptverfasser:	NAGAMUNE, Y, NODA, T, WATABE, H, OHNO, Y, SAKAKI, H, ARAKAWA, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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