Direct observation of electron jet from a point contact

We report on the photoluminescence image around a point contact fabricated in an InGaAs/GaAs quantum well using a micro-photoluminescence measurement technique. The photoluminescence image was strongly influenced by majority electron flow from the point contact, where the majority electron flow greately reduced radiative recombination of electron-hole pairs generated by the laser illumination. Using this effect we demonstrated visualization of electron flow from the point contact.