Selective area epitaxial growth of GaAs using metal gallium and trisdimethylaminoarsine

The selective area growth (SAG) of GaAs by gas-source molecular beam epitaxy (GSMBE) using metal gallium and trisdimethylaminoarsine (TDMAAs) has been investigated. GaAs growth was carried out at various substrate temperatures and TDMAAs beam equivalent pressures (BEP) on (001) GaAs substrates patterned with SiO 2 , and a phase diagram for the selective and non-selective growth is presented. SAG was found to occur at elevated growth temperatures or high TDMAAs flow rates. The growth rate decreased with increasing TDMAAs BEP, and eventually etching of GaAs by TDMAAs was observed.