Determination of the conduction band electron effective mass in hexagonal GaN
The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p * = 0.22±0.005 m o . Taking polaron effects into account the band edge mass is m b * = 0.20±0.005 m o . From the...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995, Vol.34 (9B), p.L1178-L1179 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | L1179 |
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| container_issue | 9B |
| container_start_page | L1178 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | DRECHSLER, M HOFMANN, D. M MEYER, B. K DETCHPROHM, T AMANO, H AKASAKI, I |
| description | The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is
m
p
*
= 0.22±0.005
m
o
. Taking polaron effects into account the band edge mass is
m
b
*
= 0.20±0.005
m
o
. From the resonance linewidth a mobility of 3500 cm
2
/V·s at 6 K is obtained. |
| doi_str_mv | 10.1143/jjap.34.L1178 |
| format | Article |
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m
p
*
= 0.22±0.005
m
o
. Taking polaron effects into account the band edge mass is
m
b
*
= 0.20±0.005
m
o
. From the resonance linewidth a mobility of 3500 cm
2
/V·s at 6 K is obtained.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.34.L1178</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Fermi surface: calculations and measurements; effective mass, g factor ; Physics</subject><ispartof>Japanese Journal of Applied Physics, 1995, Vol.34 (9B), p.L1178-L1179</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c431t-67653a3692c325982fb88e338864019af501da1f4b8c852a511e82ddc08666d53</citedby><cites>FETCH-LOGICAL-c431t-67653a3692c325982fb88e338864019af501da1f4b8c852a511e82ddc08666d53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3671413$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DRECHSLER, M</creatorcontrib><creatorcontrib>HOFMANN, D. M</creatorcontrib><creatorcontrib>MEYER, B. K</creatorcontrib><creatorcontrib>DETCHPROHM, T</creatorcontrib><creatorcontrib>AMANO, H</creatorcontrib><creatorcontrib>AKASAKI, I</creatorcontrib><title>Determination of the conduction band electron effective mass in hexagonal GaN</title><title>Japanese Journal of Applied Physics</title><description>The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is
m
p
*
= 0.22±0.005
m
o
. Taking polaron effects into account the band edge mass is
m
b
*
= 0.20±0.005
m
o
. From the resonance linewidth a mobility of 3500 cm
2
/V·s at 6 K is obtained.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Fermi surface: calculations and measurements; effective mass, g factor</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9UD1PwzAUtBBIlMLI7oE1xc_PdpyxKlCoyscAc_Tq2DRVmlR2QPDvCS1iug_d3XCMXYKYACi83mxoN0E1WQLk9oiNAFWeKWH0MRsJISFThZSn7CylzSCNVjBijze-93Fbt9TXXcu7wPu1565rqw-3d1bUVtw33vVxUD6EgdWfnm8pJV63fO2_6L1rqeFzejpnJ4Ga5C_-cMze7m5fZ_fZ8nn-MJsuM6cQ-szkRiOhKaRDqQsrw8paj2itUQIKClpARRDUyjqrJWkAb2VVOWGNMZXGMcsOuy52KUUfyl2stxS_SxDl7xflYjF9KVGV-y-G_NUhv6PkqAmRWlen_xKaHBQg_gDTp14t</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>DRECHSLER, M</creator><creator>HOFMANN, D. M</creator><creator>MEYER, B. K</creator><creator>DETCHPROHM, T</creator><creator>AMANO, H</creator><creator>AKASAKI, I</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1995</creationdate><title>Determination of the conduction band electron effective mass in hexagonal GaN</title><author>DRECHSLER, M ; HOFMANN, D. M ; MEYER, B. K ; DETCHPROHM, T ; AMANO, H ; AKASAKI, I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c431t-67653a3692c325982fb88e338864019af501da1f4b8c852a511e82ddc08666d53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Fermi surface: calculations and measurements; effective mass, g factor</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DRECHSLER, M</creatorcontrib><creatorcontrib>HOFMANN, D. M</creatorcontrib><creatorcontrib>MEYER, B. K</creatorcontrib><creatorcontrib>DETCHPROHM, T</creatorcontrib><creatorcontrib>AMANO, H</creatorcontrib><creatorcontrib>AKASAKI, I</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DRECHSLER, M</au><au>HOFMANN, D. M</au><au>MEYER, B. K</au><au>DETCHPROHM, T</au><au>AMANO, H</au><au>AKASAKI, I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of the conduction band electron effective mass in hexagonal GaN</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995</date><risdate>1995</risdate><volume>34</volume><issue>9B</issue><spage>L1178</spage><epage>L1179</epage><pages>L1178-L1179</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is
m
p
*
= 0.22±0.005
m
o
. Taking polaron effects into account the band edge mass is
m
b
*
= 0.20±0.005
m
o
. From the resonance linewidth a mobility of 3500 cm
2
/V·s at 6 K is obtained.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.34.L1178</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1995, Vol.34 (9B), p.L1178-L1179 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_34_L1178 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Fermi surface: calculations and measurements effective mass, g factor Physics |
| title | Determination of the conduction band electron effective mass in hexagonal GaN |
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