Determination of the conduction band electron effective mass in hexagonal GaN

Determination of the conduction band electron effective mass in hexagonal GaN

The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p *  = 0.22±0.005  m o . Taking polaron effects into account the band edge mass is m b *  = 0.20±0.005  m o . From the...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995, Vol.34 (9B), p.L1178-L1179
Hauptverfasser: DRECHSLER, M, HOFMANN, D. M, MEYER, B. K, DETCHPROHM, T, AMANO, H, AKASAKI, I
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Fermi surface: calculations and measurements
effective mass, g factor
Physics
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Zusammenfassung:The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p *  = 0.22±0.005  m o . Taking polaron effects into account the band edge mass is m b *  = 0.20±0.005  m o . From the resonance linewidth a mobility of 3500 cm 2 /V·s at 6 K is obtained.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.L1178