Abrupt and arbitrary profile formation in silicon using a low-kinetic-energy ion bombardment process
We have discovered that the carrier concentration in an epitaxial silicon film formed by the low-energy ion bombardment process is easily controlled by changing the ion bombardment energy during the film growth. While maintaining the perfect crystallinity of an epitaxial silicon layer grown at a tem...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1995, Vol.34 (2B), p.800-803 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have discovered that the carrier concentration in an epitaxial silicon film formed by the low-energy ion bombardment process is easily controlled by changing the ion bombardment energy during the film growth. While maintaining the perfect crystallinity of an epitaxial silicon layer grown at a temperature as low as 350° C, an arbitrary-shaped carrier concentration profile has been created in the film. Formation of box-shaped profiles as well as staircase-shaped profiles having very abrupt transitions is demonstrated. Formation of such arbitrary-shaped carrier profiles in an epitaxial layer is quite essential in the design of ultrasmall-dimension devices. The stability of carrier profiles against heat treatments also has been investigated. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.34.800 |