Violet and Near-UV Light Emission from GaN/Al 0.08 Ga 0.92 N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

Violet and Near-UV Light Emission from GaN/Al 0.08 Ga 0.92 N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

GaN/Al 0.08 Ga 0.92 N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al 0.08 Ga 0.92 N DH injection diode was 420 nm which originated in the band-to-impurit...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995-08, Vol.34 (8R), p.4085
Hauptverfasser: Yuichiro Kuga, Yuichiro Kuga, Toshio Shirai, Toshio Shirai, Makiko Haruyama, Makiko Haruyama, Hideo Kawanishi, Hideo Kawanishi, Yasuharu Suematsu, Yasuharu Suematsu
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Sprache:eng
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Zusammenfassung:GaN/Al 0.08 Ga 0.92 N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al 0.08 Ga 0.92 N DH injection diode was 420 nm which originated in the band-to-impurity transition in GaN. A weak peak at 360 nm was also observed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.4085