Anomalous transition in charge transport behavior of polysilane
Anomalous transition of the dispersion parameter α was observed for the first time in poly( n -butyl- n -pentylsilane) (PBPS). Time-of-flight photocurrent ( I ) of PBPS was measured. The photocurrent transient was dispersive: I ∝ t -(1-α) . The dispersion parameter α dropped around the glass transit...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1995, Vol.34 (7B), p.3820-3824 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Anomalous transition of the dispersion parameter α was observed for the first time in poly(
n
-butyl-
n
-pentylsilane) (PBPS). Time-of-flight photocurrent (
I
) of PBPS was measured. The photocurrent transient was dispersive:
I
∝
t
-(1-α)
. The dispersion parameter α dropped around the glass transition temperature
T
g
with increasing temperature, and became temperature-independent above
T
g
. The mobility was described within the framework of a formalism based on disorder due to Bässler and coworkers. Both the diagonal disorder parameter σ, the variance of the density of states, and the off-diagonal disorder parameter Σ, the degree of positional disorder, decreased around
T
g
. Nevertheless the ratio of the off-diagonal disorder parameter Σ to the diagonal disorder parameter σ was found to increase above the transition temperature. This anomalous transition is rationalized by the assumption that the off-diagonal disorder dominates charge transport in PBPS above
T
g
. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.34.3820 |