The noise reduction effect of the amplified metal oxide semiconductor imager

It is predicted that the amplified metal oxide semiconductor imager (AMI) exhibits carrier movements between adjacent pixels. Consequently, it is considered that a spurious resolution reduction effect or a random noise reduction effect occurs. The authors have clarified these phenomena theoretically and have measured the sensitivity characteristic between pixels and the random noise using devices. As a result, carrier movements below 5% between adjacent pixels were clearly observed, and it was confirmed that 0.89-times random noise reduction already occurred at an intensity of incidence of 1/1000 of saturation, and 0.79-times reduction at intensity of 1/100 of saturation.