Semi-insulating polysilicon thin-film transistor : a proposed thin-film transistor
We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995, Vol.34 (7A), p.3497-3499 |
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| container_end_page | 3499 |
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| container_issue | 7A |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | KWANGSOO CHOI MATSUMURA, M |
| description | We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the homo TFT.
It was found that both the on-current and the off-current can be controlled by crystallization conditions. |
| doi_str_mv | 10.1143/JJAP.34.3497 |
| format | Article |
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It was found that both the on-current and the off-current can be controlled by crystallization conditions.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNptkE1LxDAQhoMoWFdv_oAePJo1k06S1tuyuOqyoPhxDtkk1Ui3LUk97L-3ZcWTMPAy8LzD8BByCWwOgMXNer14nhc4TqWOSAYFKopMimOSMcaBYsX5KTlL6WtcpUDIyMur3wUa2vTdmCG0H3nfNfsUmmC7Nh8-Q0vr0OzyIZo2hTR0Mb_NTd7Hru-Sd_8S5-SkNk3yF785I--ru7flA9083T8uFxtquVAD9UI62HKomKwFB-BOlVzhVpalqqTBGkouQXmUzIGouDSuRCMs8w68tFjMyPXhro1dStHXuo9hZ-JeA9OTDz350AXqyceIXx3w3iRrmnr814b01ykklDiWfgBs2F_h</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>KWANGSOO CHOI</creator><creator>MATSUMURA, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1995</creationdate><title>Semi-insulating polysilicon thin-film transistor : a proposed thin-film transistor</title><author>KWANGSOO CHOI ; MATSUMURA, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-e56d1b21906f52112d78274b688796a4f182617e460d15926ad84a5c0ed1e6c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KWANGSOO CHOI</creatorcontrib><creatorcontrib>MATSUMURA, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KWANGSOO CHOI</au><au>MATSUMURA, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semi-insulating polysilicon thin-film transistor : a proposed thin-film transistor</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995</date><risdate>1995</risdate><volume>34</volume><issue>7A</issue><spage>3497</spage><epage>3499</epage><pages>3497-3499</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the homo TFT.
It was found that both the on-current and the off-current can be controlled by crystallization conditions.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.34.3497</doi><tpages>3</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1995, Vol.34 (7A), p.3497-3499 |
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| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Semi-insulating polysilicon thin-film transistor : a proposed thin-film transistor |
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