Semi-insulating polysilicon thin-film transistor : a proposed thin-film transistor

We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995, Vol.34 (7A), p.3497-3499
Hauptverfasser:	KWANGSOO CHOI, MATSUMURA, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the homo TFT. It was found that both the on-current and the off-current can be controlled by crystallization conditions.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.34.3497