Hg-sensitized photochemical vapor deposition application to hydrogenated amorphous silicon photoconversion layer overlaid on charge coupled device

Hg-sensitized photochemical vapor deposition application to hydrogenated amorphous silicon photoconversion layer overlaid on charge coupled device

An Hg-sensitized photochemical vapor deposition method has been developed which has enabled a hydrogenated amorphous silicon photoconversion layer to be overlaid on a charge coupled device (CCD) imager, without a pixel separation structure. This chemical vapor deposition (CVD) method has been used t...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995, Vol.34 (5A), p.2223-2228
Hauptverfasser: NOZAKI, H, SAKUMA, N, NIIYAMA, T, IHARA, H, ISHIZUKA, Y, ICHINOSE, H, IIDA, Y, SASAKI, M, MANABE, S
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Imaging devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:An Hg-sensitized photochemical vapor deposition method has been developed which has enabled a hydrogenated amorphous silicon photoconversion layer to be overlaid on a charge coupled device (CCD) imager, without a pixel separation structure. This chemical vapor deposition (CVD) method has been used to realize imaging devices with high sensitivity and high resolution for high-definition TV.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.2223