High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-µm Vertical-Cavity Surface-Emitting Lasers

High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-µm Vertical-Cavity Surface-Emitting Lasers

We report an InGaP/GaAs multilayer grown by low-pressure MOCVD for highly reliable 0.98-µ m InGaAs vertical-cavity surface-emitting lasers. High reflectivity of over 99% is obtained for the 45-period multilayer. The stability of the layer thickness over the entire multilayer is discussed from the vi...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995, Vol.34 (2S), p.1253
Hauptverfasser: Shinoda, Kazunori, Hiramoto, Kiyohisa, Uomi, Kazuhisa, Tomonobu Tsuchiya, Tomonobu Tsuchiya
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Sprache:eng
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Zusammenfassung:We report an InGaP/GaAs multilayer grown by low-pressure MOCVD for highly reliable 0.98-µ m InGaAs vertical-cavity surface-emitting lasers. High reflectivity of over 99% is obtained for the 45-period multilayer. The stability of the layer thickness over the entire multilayer is discussed from the viewpoint of the asymmetrical reflectivity spectrum. Our results indicate that the layer thickness slightly decreases during epitaxial growth.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.1253