The growth of high quality GaAs on GaAs (111)A

Whilst it is well known that the growth of GaAs on singular GaAs(111)A substrates frequently gives films with poor morphology, there is little understanding of the mechanisms involved. We have made a systematic study of the growth condition dependence of the surface morphology of such films and thes...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (7A), p.L905-L907
Hauptverfasser:	SATO, K, FAHY, M. R, JOYCE, B. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	Whilst it is well known that the growth of GaAs on singular GaAs(111)A substrates frequently gives films with poor morphology, there is little understanding of the mechanisms involved. We have made a systematic study of the growth condition dependence of the surface morphology of such films and these results are discussed in terms of the sticking coefficient of As 4 on the growing GaAs(111)A surface and the origin of the defects is attributed to excess Ga. We have determined the conditions necessary for high quality growth.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.L905