A new Si doping source for GaAs growth by molecular beam epitaxy

A new Si cluster material, tertiary-butyloctasilacubane ( t BuSi) 8 , is used as an efficient Si doping source for molecular beam epitaxy of GaAs. The vapor pressure of this material varies according to an activation energy of 1.51 eV. A Si concentration of 2×10 20 /cm 3 is obtained at a Si cluster...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (3B), p.413-416
Hauptverfasser:	HORIKOSHI, Y, FAHY, M. R, KAWASHIMA, M, FURUKAWA, K, FUJINO, M, MATSUMOTO, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	A new Si cluster material, tertiary-butyloctasilacubane ( t BuSi) 8 , is used as an efficient Si doping source for molecular beam epitaxy of GaAs. The vapor pressure of this material varies according to an activation energy of 1.51 eV. A Si concentration of 2×10 20 /cm 3 is obtained at a Si cluster cell temperature of 210°C and a GaAs growth rate of 1 µm/h. Although the grown layers suffer from heavy carbon contamination from the Si cluster, this problem can be alleviated by increasing the substrate temperature.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.L413