Raman scattering spectroscopy of 3C-SiC(111) heteroepitaxial films

Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on Si(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by the formation of the v...

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Veröffentlicht in:Japanese Journal of Applied Physics 1994-02, Vol.33 (2), p.997-998
Hauptverfasser: YAMANAKA, M, IKOMA, K, OHTSUKA, M, ISHIZAWA, T, SHICHI, Y
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container_title Japanese Journal of Applied Physics
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creator YAMANAKA, M
IKOMA, K
OHTSUKA, M
ISHIZAWA, T
SHICHI, Y
description Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on Si(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by the formation of the voids at the interface between 3C-SiC film and Si substrate during the CVD process.
doi_str_mv 10.1143/jjap.33.997
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Anelasticity, internal friction, stress relaxation, and mechanical resonances
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Infrared and raman spectra and scattering
Mechanical and acoustical properties
Mechanical and acoustical properties of condensed matter
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other nonmetallic inorganics
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Raman scattering spectroscopy of 3C-SiC(111) heteroepitaxial films
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