Raman scattering spectroscopy of 3C-SiC(111) heteroepitaxial films

Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on Si(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by the formation of the v...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994-02, Vol.33 (2), p.997-998
Hauptverfasser:	YAMANAKA, M, IKOMA, K, OHTSUKA, M, ISHIZAWA, T, SHICHI, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Anelasticity, internal friction, stress relaxation, and mechanical resonances Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Infrared and raman spectra and scattering Mechanical and acoustical properties Mechanical and acoustical properties of condensed matter Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetallic inorganics Physical properties of thin films, nonelectronic Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on Si(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by the formation of the voids at the interface between 3C-SiC film and Si substrate during the CVD process.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.997