600-nm-range GaInP/AlInP strained quantum well lasers grown by gas source molecular beam epitaxy

GaInP strained single quantum well (SSQW) lasers in the 630–710 nm range grown by gas source molecular beam epitaxy (GSMBE) using a novel shutter control method were systematically investigated. A good controllability in strain amount as well as good in-plane compositional homogeneity over 4-cm-long distance of the laser wafers were confirmed. For +1.1% compressive SSQW lasers (708 nm in wavelength), a very low threshold current density ( J th ) of 175 A/cm 2 was obtained. These facts suggest that the novel shutter control method is very effective for fabricating GaInP SSQW lasers. Furthermore, the post-annealing effect on lasing characteristics of GaInP SSQW lasers was investigated. The increased p carrier density of Be-doped AlInP layers was obtained with the remarkable reduction in J th value of 633 nm tensile SSQW lasers from 850 A/cm 2 to 555 A/cm 2 .