The novel capacitor structure with polysilicon grain hole for advanced dynamic random access memory

A simple and new technique to realize relatively large capacitance for high density dynamic random access memory (DRAM) is discussed. This technique adopts the surface modulation technology on bottom electrode polysilicon of stacked capacitor structure, and holes are created in the bottom polysilico...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (1B), p.578-580
Hauptverfasser:	Yee, Youngjoo, Yu, Sanggi, Kukjin Chun, Kukjin Chun, Jong Duk Lee, Jong Duk Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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