Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors

Lateral grain growth in nondoped poly-Si films was studied by using Si thin films (500 Å) with different structures as a starting material for excimer laser crystallization. It was clarified that the lateral grain growth phenomenon (micron-size grains with strong (111) orientation) upon excimer lase...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994-10, Vol.33 (10), p.5657-5662
Hauptverfasser:	KURIYAMA, H, NOHDA, T, AYA, Y, KUWAHARA, T, WAKISAKA, K, KIYAMA, S, TSUDA, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physical radiation effects, radiation damage Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure of solids and liquids crystallography Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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