Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors
Lateral grain growth in nondoped poly-Si films was studied by using Si thin films (500 Å) with different structures as a starting material for excimer laser crystallization. It was clarified that the lateral grain growth phenomenon (micron-size grains with strong (111) orientation) upon excimer lase...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 1994-10, Vol.33 (10), p.5657-5662 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Lateral grain growth in nondoped poly-Si films was studied by using Si thin films
(500 Å) with different structures as a starting material for excimer laser crystallization.
It was clarified that the lateral grain growth phenomenon (micron-size grains with strong
(111) orientation) upon excimer laser annealing was strongly affected by both the
microstructure and the orientation of the initial Si thin films. This result supports
our previous speculation that the principal driving force of the lateral grain growth
phenomenon is surface energy anisotropy. Poly-Si thin-film transistors using these
films show a high field effect mobility of 440 cm
2
/V·s, achieved through
a low-temperature process below 600° C. This excellent electrical characteristic
is thought to be due to the large grain size of poly-Si thin film with controlled
orientation, good crystallinity, and a smooth surface. |
---|---|
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.33.5657 |