Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family
Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994, Vol.33 (9S), p.5521 |
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| container_issue | 9S |
| container_start_page | 5521 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | Jun Hatano, Jun Hatano Tomonori Mukaigawa, Tomonori Mukaigawa Hiroyuki Uehara, Hiroyuki Uehara Alexei Gruverman, Alexei Gruverman Koichiro Takahashi, Koichiro Takahashi Ken Yukino, Ken Yukino |
| description | Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first is the crystallization from the amorphous to a metastable crystal state, and the second is from the metastable to a ferroelectric stable state of Pb
5
Ge
3
O
11
. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments. |
| doi_str_mv | 10.1143/JJAP.33.5521 |
| format | Article |
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5
Ge
3
O
11
. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.33.5521</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1994, Vol.33 (9S), p.5521</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-18f96d77bb9da5d96a39d5e8848188b0f9d89c95ae7968adcb1e2d79cef224f23</citedby><cites>FETCH-LOGICAL-c356t-18f96d77bb9da5d96a39d5e8848188b0f9d89c95ae7968adcb1e2d79cef224f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Jun Hatano, Jun Hatano</creatorcontrib><creatorcontrib>Tomonori Mukaigawa, Tomonori Mukaigawa</creatorcontrib><creatorcontrib>Hiroyuki Uehara, Hiroyuki Uehara</creatorcontrib><creatorcontrib>Alexei Gruverman, Alexei Gruverman</creatorcontrib><creatorcontrib>Koichiro Takahashi, Koichiro Takahashi</creatorcontrib><creatorcontrib>Ken Yukino, Ken Yukino</creatorcontrib><title>Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family</title><title>Japanese Journal of Applied Physics</title><description>Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first is the crystallization from the amorphous to a metastable crystal state, and the second is from the metastable to a ferroelectric stable state of Pb
5
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O
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. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNot0L1OwzAcBHALgUQobDyAH4CE-CuxxygihSoSHdo5cuy_qSFpKjsM5ekhwHQ6nXTDD6F7kmeEcPa42VTbjLFMCEouUEIYL1OeF-ISJXlOScoVpdfoJsb3n1oIThK0r8M5znoY_Jc_vuFtmAzEiCeHq3EKp8P0GfHu4M0Hbvww_g4NhDDBAGYO3uAWtMVrCKM-6hlwo0c_nG_RldNDhLv_XKF987Srn9P2df1SV21qmCjmlEinCluWfa-sFlYVmikrQEouiZR97pSVyiihoVSF1Nb0BKgtlQFHKXeUrdDD368JU4wBXHcKftTh3JG8W0i6haRjrFtI2DfGJFUl</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Jun Hatano, Jun Hatano</creator><creator>Tomonori Mukaigawa, Tomonori Mukaigawa</creator><creator>Hiroyuki Uehara, Hiroyuki Uehara</creator><creator>Alexei Gruverman, Alexei Gruverman</creator><creator>Koichiro Takahashi, Koichiro Takahashi</creator><creator>Ken Yukino, Ken Yukino</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1994</creationdate><title>Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family</title><author>Jun Hatano, Jun Hatano ; Tomonori Mukaigawa, Tomonori Mukaigawa ; Hiroyuki Uehara, Hiroyuki Uehara ; Alexei Gruverman, Alexei Gruverman ; Koichiro Takahashi, Koichiro Takahashi ; Ken Yukino, Ken Yukino</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-18f96d77bb9da5d96a39d5e8848188b0f9d89c95ae7968adcb1e2d79cef224f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jun Hatano, Jun Hatano</creatorcontrib><creatorcontrib>Tomonori Mukaigawa, Tomonori Mukaigawa</creatorcontrib><creatorcontrib>Hiroyuki Uehara, Hiroyuki Uehara</creatorcontrib><creatorcontrib>Alexei Gruverman, Alexei Gruverman</creatorcontrib><creatorcontrib>Koichiro Takahashi, Koichiro Takahashi</creatorcontrib><creatorcontrib>Ken Yukino, Ken Yukino</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jun Hatano, Jun Hatano</au><au>Tomonori Mukaigawa, Tomonori Mukaigawa</au><au>Hiroyuki Uehara, Hiroyuki Uehara</au><au>Alexei Gruverman, Alexei Gruverman</au><au>Koichiro Takahashi, Koichiro Takahashi</au><au>Ken Yukino, Ken Yukino</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994</date><risdate>1994</risdate><volume>33</volume><issue>9S</issue><spage>5521</spage><pages>5521-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first is the crystallization from the amorphous to a metastable crystal state, and the second is from the metastable to a ferroelectric stable state of Pb
5
Ge
3
O
11
. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments.</abstract><doi>10.1143/JJAP.33.5521</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994, Vol.33 (9S), p.5521 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family |
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