Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family
Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 1994, Vol.33 (9S), p.5521 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370° C and 530° C on heating: the first is the crystallization from the amorphous to a metastable crystal state, and the second is from the metastable to a ferroelectric stable state of Pb
5
Ge
3
O
11
. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments. |
---|---|
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.33.5521 |