Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film
A (Ba 0.24 Sr 0.76 )TiO 3 thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field wa...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994-09, Vol.33 (9S), p.5297 |
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| Sprache: | eng |
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| container_issue | 9S |
| container_start_page | 5297 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | Kazuhide Abe, Kazuhide Abe Shuichi Komatsu, Shuichi Komatsu |
| description | A (Ba
0.24
Sr
0.76
)TiO
3
thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba
x
Sr
1-
x
)TiO
3
polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba
x
Sr
1-
x
)TiO
3
thin films. |
| doi_str_mv | 10.1143/JJAP.33.5297 |
| format | Article |
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0.24
Sr
0.76
)TiO
3
thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba
x
Sr
1-
x
)TiO
3
polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba
x
Sr
1-
x
)TiO
3
thin films.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.33.5297</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1994-09, Vol.33 (9S), p.5297</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c807-a613dd268ee262dd3c86b2ef6ddccffbb48bfe70cd92d19cbaab1a2fe8446a983</citedby><cites>FETCH-LOGICAL-c807-a613dd268ee262dd3c86b2ef6ddccffbb48bfe70cd92d19cbaab1a2fe8446a983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kazuhide Abe, Kazuhide Abe</creatorcontrib><creatorcontrib>Shuichi Komatsu, Shuichi Komatsu</creatorcontrib><title>Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film</title><title>Japanese Journal of Applied Physics</title><description>A (Ba
0.24
Sr
0.76
)TiO
3
thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba
x
Sr
1-
x
)TiO
3
polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba
x
Sr
1-
x
)TiO
3
thin films.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNot0M1LwzAcxvEgCtbpzT_gd1SwNW9N0-Oc23QMOrD3kOaFRbq1JAX1v3dDT1-ey3P4IHRPcEEIZ8-bzXxXMFaUtK4uUEYYr3KORXmJMowpyXlN6TW6SenzNEXJSYaa5Rgm_R10D-s4fE170EcLr8H1zkwxGNjFYXRxCi7B4OHhRQMuKIePeGol4LENDTBo9-EIq9AfbtGV131yd_-doXa1bBdv-bZZvy_m29xIXOVaEGYtFdI5Kqi1zEjRUeeFtcZ433Vcdt5V2NiaWlKbTuuOaOqd5FzoWrIZevq7NXFIKTqvxhgOOv4ogtXZQp0tFGPqbMF-Aen4T_Y</recordid><startdate>19940901</startdate><enddate>19940901</enddate><creator>Kazuhide Abe, Kazuhide Abe</creator><creator>Shuichi Komatsu, Shuichi Komatsu</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940901</creationdate><title>Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film</title><author>Kazuhide Abe, Kazuhide Abe ; Shuichi Komatsu, Shuichi Komatsu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c807-a613dd268ee262dd3c86b2ef6ddccffbb48bfe70cd92d19cbaab1a2fe8446a983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kazuhide Abe, Kazuhide Abe</creatorcontrib><creatorcontrib>Shuichi Komatsu, Shuichi Komatsu</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kazuhide Abe, Kazuhide Abe</au><au>Shuichi Komatsu, Shuichi Komatsu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994-09-01</date><risdate>1994</risdate><volume>33</volume><issue>9S</issue><spage>5297</spage><pages>5297-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>A (Ba
0.24
Sr
0.76
)TiO
3
thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba
x
Sr
1-
x
)TiO
3
polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba
x
Sr
1-
x
)TiO
3
thin films.</abstract><doi>10.1143/JJAP.33.5297</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994-09, Vol.33 (9S), p.5297 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_33_5297 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film |
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