Epitaxial Growth and Dielectric Properties of (Ba 0.24 Sr 0.76 )TiO 3 Thin Film

A (Ba 0.24 Sr 0.76 )TiO 3 thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field wa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1994-09, Vol.33 (9S), p.5297
Hauptverfasser: Kazuhide Abe, Kazuhide Abe, Shuichi Komatsu, Shuichi Komatsu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A (Ba 0.24 Sr 0.76 )TiO 3 thin film was epitaxially grown on a Pt/MgO(100) substrate by rf magnetron sputtering, and its dielectric properties were evaluated. The thin film had a dielectric constant of 1400 at zero bias field. A drastic decrease of dielectric constant was observed when bias field was applied. Based on the experimental results on the epitaxial film, size effects reported in the dielectric constant of (Ba x Sr 1- x )TiO 3 polycrystalline thin films were discussed. Both the sensitive bias field dependence of the dielectric constant and the existence of strong local fields are probably the origin of the size effects observed in (Ba x Sr 1- x )TiO 3 thin films.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.5297