Electrical properties of gallium manganese antimonide : a new diluted magnetic semiconductor

Ga 1- x Mn x Sb, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesised with different Mn concentrations ( x =0.0048, 0.01, 0.05 and 0.14) using Bridgman growth technique. The stoichiometry and the composition were verified by the electron probe microanalysis and X-ray diffractio...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (8), p.4581-4582
Hauptverfasser:	Tanusree Adhikari, Tanusree Adhikari, Sukumar Basu, Sukumar Basu
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Ga 1- x Mn x Sb, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesised with different Mn concentrations ( x =0.0048, 0.01, 0.05 and 0.14) using Bridgman growth technique. The stoichiometry and the composition were verified by the electron probe microanalysis and X-ray diffraction analysis. At room temperature electrical parameters like resistivity, Hall co-efficient, carrier concentration and mobility were determined. The variations of resistivity and Hall co-efficient with temperature were studied and it was found that the alloy was degenerate in nature.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.4581