Time evolution of contact-electrified electron dissipation on silicon oxide surface investigated using noncontact atomic force microscope

Deposition and observation of contact-electrified electrons on thin silicon oxide surface were performed separately and successfully investigated by the noncontact DC mode measurement of the induced electrostatic force with an atomic force microscope (AFM). It was found that the dissipation of the contact-electrified electrons had three stages with respect to time, which correspond to a stable state, an unstable state and a trapped state at the charge trap site.