Diffusion length of holes in n-ZnSe measured by Schottky barrier photovoltage method

The diffusion length ( L ) of holes in undoped n-type ZnSe has been measured by using the Schottky barrier photovoltage method. The samples measured were single crystals and epitaxial layers which were prepared by metalorganic chemical vapor deposition. The values of L were 1 µm for single crystals and 0.15 µm for epilayers. The lifetimes estimated from those values were 4.5 ns and 0.10 ns, respectively.