Influence of Manganese on Lanthanum-Doped BaTiO 3
The minimum room-temperature resistivity for La–Mn–codoped BaTiO 3 occurred at [La +3 ]-5/3[Mn + x ]∼0.35 mol%. Most of the Mn acceptors were in the bulk regions, existing as Mn +2 ions. The others, existing as Mn +3 ions, cause the grain growth inhibition effect and should exist at the grain bounda...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1994-03, Vol.33 (3R), p.1412 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The minimum room-temperature resistivity for La–Mn–codoped BaTiO
3
occurred at [La
+3
]-5/3[Mn
+
x
]∼0.35 mol%. Most of the Mn acceptors were in the bulk regions, existing as Mn
+2
ions. The others, existing as Mn
+3
ions, cause the grain growth inhibition effect and should exist at the grain boundaries, similar to an acceptor level. The slope of the positive temperature coefficient resistance (PTCR) effect (ρ
160° C
/ρ
120° C
) was increased with increasing Mn content. However, the maximum order of PTCR (ρ
max
/ρ
min
) existed at [Mn
+
x
]∼0.06 mol%. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.33.1412 |