Influence of Manganese on Lanthanum-Doped BaTiO 3

The minimum room-temperature resistivity for La–Mn–codoped BaTiO 3 occurred at [La +3 ]-5/3[Mn + x ]∼0.35 mol%. Most of the Mn acceptors were in the bulk regions, existing as Mn +2 ions. The others, existing as Mn +3 ions, cause the grain growth inhibition effect and should exist at the grain bounda...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 1994-03, Vol.33 (3R), p.1412
Hauptverfasser: Chen, Ying-Chung, Lo, Gun-Man, Shih, Chi-Ren, Wu, Long, Mao-Hsiung Chen, Mao-Hsiung Chen, Kuang-Chih Huang, Kuang-Chih Huang
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The minimum room-temperature resistivity for La–Mn–codoped BaTiO 3 occurred at [La +3 ]-5/3[Mn + x ]∼0.35 mol%. Most of the Mn acceptors were in the bulk regions, existing as Mn +2 ions. The others, existing as Mn +3 ions, cause the grain growth inhibition effect and should exist at the grain boundaries, similar to an acceptor level. The slope of the positive temperature coefficient resistance (PTCR) effect (ρ 160° C /ρ 120° C ) was increased with increasing Mn content. However, the maximum order of PTCR (ρ max /ρ min ) existed at [Mn + x ]∼0.06 mol%.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.1412