Spontaneous emission enhancement in pillar-type microcavities

A reduction in photoluminescence decay time of pillar-type microcavities was observed with decreasing the detuning between the resonance wavelength of the cavities and the luminescence peak wavelength of the active layers. The radiative recombination time was extracted from the measured photolumines...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993, Vol.32 (1A/B), p.L54-L57
Hauptverfasser:	TEZUKA, T, NUNOUE, S.-Y, YOSHIDA, H, NODA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	A reduction in photoluminescence decay time of pillar-type microcavities was observed with decreasing the detuning between the resonance wavelength of the cavities and the luminescence peak wavelength of the active layers. The radiative recombination time was extracted from the measured photoluminescence decay time by a diffusion equation analysis. The obtained spontaneous emission enhancement factor was between 1.6 and 1.8. This is the first observation of a spontaneous emission enhancement in three-dimensionally confined semiconductor microcavities.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.32.l54