In-depth profile of electrical property of InAs epitaxial layer grown on semi-insulating GaAs by low-pressure metalorganic chemical vapor deposition

Indium arsenide layers of various thicknesses were grown on semi-insulating GaAs by low-pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and tertiarybutylarsine (TBAs) as precursors. On the assumption that properties of the underlying grown layer do not change dur...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-03, Vol.32 (3B), p.L368-L370
Hauptverfasser:	IWAMURA, Y, SHIGETA, H, WATANABE, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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