In-depth profile of electrical property of InAs epitaxial layer grown on semi-insulating GaAs by low-pressure metalorganic chemical vapor deposition

Indium arsenide layers of various thicknesses were grown on semi-insulating GaAs by low-pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and tertiarybutylarsine (TBAs) as precursors. On the assumption that properties of the underlying grown layer do not change during growth of the upper layer, the in-depth profile of the electrical property of the epitaxial layer was obtained by the differential Hall effect. It was proved that the uppermost layer, 1.8 µm from the interface, has an electron mobility of 61300 cm 2 /V·s and a carrier concentration of 2.1×10 16 cm -3 (the average mobility of 29800 cm 2 /V·s and average carrier concentration of 1.8×10 16 cm -3 ) at 80 K.