Extremely low-resistivity high-electron-concentration ZnSe grown by means of selective doping method

A novel controlled doping technique, the selective doping method, is presented for the first time in order to resolve the compensation problem in wide-band-gap II-VI compounds. With this method, high-quality n-type ZnSe layers with an electron concentration up to 3×10 20 cm -3 and resistivity as low...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.654-659
Hauptverfasser:	ZIQIANG ZHU, TAKEBAYASHI, K, YAO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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