Extremely low-resistivity high-electron-concentration ZnSe grown by means of selective doping method

A novel controlled doping technique, the selective doping method, is presented for the first time in order to resolve the compensation problem in wide-band-gap II-VI compounds. With this method, high-quality n-type ZnSe layers with an electron concentration up to 3×10 20 cm -3 and resistivity as low as 1×10 -4 Ω·cm have been obtained. The paper describes in detail the growth and characteristics of n-type ZnSe layers heavily doped with chlorine by means of a selective doping method during molecular beam epitaxy. The selectively Cl-doped ZnSe samples with electron concentrations from 10 18 to 10 20 cm -3 have been characterized in terms of electrical and photoluminescence (PL) measurements. The electrical and PL results show that the selectively doped ZnSe layers are superior to uniformly doped ones, especially in the case of high Cl doping.