Photon-Stimulated Ion Desorption from Semiconductor Surfaces

Photon-Stimulated Ion Desorption from Semiconductor Surfaces

Photon-stimulated ion desorption (PSD) from chemically and physically modified Si and GaAs surfaces are investigated by using synchrotron radiation. It is found that the ion species of desorption, their yields, and their kinetic energies are greatly changed depending on the bonding state of the surf...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-12, Vol.32 (12S), p.6173
Hauptverfasser: Mochiji, Kozo, Ochiai, Isao, Ogawa, Tarou, Yamamoto, Seiji, Itabashi, Naoshi, Lee, Kaidee, Hanson, David M.
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container_end_page
container_issue 12S
container_start_page 6173
container_title Japanese Journal of Applied Physics
container_volume 32
creator Mochiji, Kozo
Ochiai, Isao
Ogawa, Tarou
Yamamoto, Seiji
Itabashi, Naoshi
Lee, Kaidee
Hanson, David M.
description Photon-stimulated ion desorption (PSD) from chemically and physically modified Si and GaAs surfaces are investigated by using synchrotron radiation. It is found that the ion species of desorption, their yields, and their kinetic energies are greatly changed depending on the bonding state of the surface atoms or adsorbates. These phenomena are caused by PSD mechanism in which ion desorption is based on electronic transitions of surface atoms by photon absorption. In addition to reporting our experimental results, we discuss the possibilities of using PSD for controlling surface structure on the atomic scale.
doi_str_mv 10.1143/JJAP.32.6173
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title Photon-Stimulated Ion Desorption from Semiconductor Surfaces
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