Photon-Stimulated Ion Desorption from Semiconductor Surfaces
Photon-stimulated ion desorption (PSD) from chemically and physically modified Si and GaAs surfaces are investigated by using synchrotron radiation. It is found that the ion species of desorption, their yields, and their kinetic energies are greatly changed depending on the bonding state of the surf...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1993-12, Vol.32 (12S), p.6173 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Photon-stimulated ion desorption (PSD) from chemically and physically modified Si and GaAs surfaces are investigated by using synchrotron radiation. It is found that the ion species of desorption, their yields, and their kinetic energies are greatly changed depending on the bonding state of the surface atoms or adsorbates. These phenomena are caused by PSD mechanism in which ion desorption is based on electronic transitions of surface atoms by photon absorption. In addition to reporting our experimental results, we discuss the possibilities of using PSD for controlling surface structure on the atomic scale. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.32.6173 |