Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures
GaAs/GaAs 1- x P x strained-barrier quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE) have been investigated using photoreflectance (PR) spectroscopy. On the basis of the square-potential model, we have determined the band offsets at the heterojunction and their dependence on...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.544-547 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | GaAs/GaAs
1-
x
P
x
strained-barrier quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE) have been investigated using photoreflectance (PR) spectroscopy. On the basis of the square-potential model, we have determined the band offsets at the heterojunction and their dependence on the phosphorus composition. It was found that in the GaAs/GaAs
1-
x
P
x
strained-barrier quantum well, the band offsets are almost linearly dependent on the phosphorus composition in the range of
x
≤0.23. In addition, it was derived that the conduction band offset ratio
Q
c
=0.57±0.05. This result is consistent with our previous study concerning GaAs/GaAsP “strained-well” quantum well structures. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.32.544 |